For the atomically thin 2D semiconductors with great potentials in the post Moore's era, the doping is a prerequisite for the device engineering and integration. Limited by the doping approaches, elemental doping of 2D semiconductors has not been fully explored. Here, by using a liquid phase edge epitaxy method which can dissolve the dopants in the liquid phase, we have succeeded in doping MoS2 monolayer with more than 40 elements (including transition metals, lanthanides, and main group elements). In this doping library, rarely observed p-type transport behavior has been obtained in Ti, Zn, and Au doped MoS2 monolayers. While Cu, Ga, Zr, Nb, In, Sn, Hf, Ta, Pb, Bi and rare earth of Eu, Gd, Tm, Lu doped MoS2 monolayers have showed low on/off ratios (<10). The obtained p-type, n-type and metallic MoS2 monolayers enables future all-MoS2 based device integration. Additionally, rare earth of Ce, Nd, Dy and Ho doped MoS2 monolayers have showed soft magnetization with semiconducting transport behavior. At last, DFT calculations have revealed that the preferred doping configurations varies for different elements from Mo-substitution, S-substitution to S-site adsorption.

Advanced Materials, 2026; 38:e22574 https://doi.org/10.1002/adma.202522574